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  Datasheet File OCR Text:
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Doc. No. 5SYA1607-01 Aug 02
/RZ ORVV WKLQ ,*%7 GLH +LJKO\ UXJJHG 637 GHVLJQ /DUJH IURQW ERQGDEOH DUHD
(Tj = 25C, unless specified otherwise) 6\PERO VCES IC ICM Tj Limited by Tjmax &RQGLWLRQV 9DOXHV 1200 50 100 -40 ... +150 8QLW V A A C
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3DUDPHWHU Collector-Emitter Voltage DC Collector Current Maximum Collector Current Operating Temperature
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3DUDPHWHU Collector-Emitter Saturation Voltage www..com Collector-Emitter leakage Current Gate-Emitter leakage Current Gate-Emitter Threshold Voltage Turn-on delay time Rise time Turn-on switching energy Turn-off delay time Fall time Turn-off switching energy Internal gate resistance Input capacitance Total gate charge 6\PERO VCE(sat) ICES IGES VGE(TO) td(on) tr Eon td(off) tf Eoff RGint Cies Qge
(Tj = 25C, unless specified otherwise) &RQGLWLRQV IC = 50 A, VGE = 15 V VCE = 1200 V, VGE = 0 V IC = 2 mA, VCE = VGE IC = 50 A, VCC = 600 V, RG 9GE = 15 V, Tj = 125 C, L = 50 nH, Inductive load, FWD : 5SLX12E1200 Tj = 125 C Tj = 25 C Tj = 125 C 4.5 100 50 5.5 550 40 5 5 Vce = 25 V, Vge = 0 V, f = 1 MHz Vge = -15 .. +15 V 4.5 600 nF nC 200 200 6.5 PLQ W\S PD[ 1.9 2.1 100 2.3 8QLW V V A A nA V ns ns mJ ns ns mJ Tj = 25 C 1.7
VCE = 0 V, VGE = 20 V
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3DUDPHWHU Overall die Dimensions LxW 9.1 x 9.0 7.6 x 7.5 1.2 x 1.2 130 20 AISi1 AI / Ti / Ni / Ag 4 1.8 Exposed L x W (except gate pad) Front metal Gate pad Thickness Metallization
1)
8QLW mm mm mm m m m
LxW
Front Back
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For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA2033-01 April 02.
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Emitter
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Note : all dimensions are shown in mm
Note : device is sensitive to electrostatic discharge
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$%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland
Doc. No. 5SYA1607-01 Aug 02
Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abbsem.com


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